WAFER SERVICES

Laser Marking done for wafer identification before processing starts - reducing potential errors and contamination.

Patterning/Lithography:

Improved Photo aligning with Ultratech Steppers & Canon Aligners.

Photo masking with Positive Resist & Negative Resist

Deposition:

PECVD SiO2: low particulate and excellent uniformity thickness in Novellus Concept 1. Doped (5% Phosphorous) & Un-doped.

PECVD Silicon Nitride glass low stress (slightly tensile), low particulate and excellent uniformity thickness in Novellus Concept 1.

LPCVD Oxide – Doped (5% Phosphorous) and Un-doped.

LPCVD Polysilicon.

LPCVD Silicon Nitride.

Vapox Film Deposition in low temperature (400^oC) oxide glassivation. Doped (5% Phosphorous ) and Un-doped.

Nitride, Oxide, and metal sputtering with Varian and Perkin Elmer Equipment.

Metal deposition: Al, Al-Si 1% and AlSiCu Metals offered. Custom coatings and target materials are also welcome.

Removal Processes Including Etching Options:

Wet Etching of metal, silicon, oxide.

Plasma Dry Etching using Tegal 703E and 901E reactors for etching: SiN films, polysilicon, Ti films. Coming: DRIE with ICP etcher.

Ashing.

Modification of Electrical Properties:

Diffusion Furnaces: utilizing Trans LC. Long high temp drives maintain up to 1250^oC.

Gate Oxide

Doping: Boron with BBr3 and POCl3.

Ion Implantation thru affiliates (bundling options).

EPI thru affiliates (bundling options).

H2 ANNEALING low temperature for Gate Oxides