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WAFER SERVICES
Laser Marking done for wafer identification before processing starts - reducing potential errors and contamination.
Patterning/Lithography:
Improved Photo aligning with Ultratech Steppers & Canon Aligners.
Photo masking with Positive Resist & Negative Resist
Deposition:
PECVD SiO2: low particulate and excellent uniformity thickness in Novellus Concept 1. Doped (5% Phosphorous) & Un-doped.
PECVD Silicon Nitride glass low stress (slightly tensile), low particulate and excellent uniformity thickness in Novellus Concept 1.
LPCVD Oxide – Doped (5% Phosphorous) and Un-doped.
LPCVD Polysilicon.
LPCVD Silicon Nitride.
Vapox Film Deposition in low temperature (400oC) oxide glassivation. Doped (5% Phosphorous ) and Un-doped.
Nitride, Oxide, and metal sputtering with Varian and Perkin Elmer Equipment.
Metal deposition: Al, Al-Si 1% and AlSiCu Metals offered. Custom coatings and target materials are also welcome.
Removal Processes Including Etching Options:
Wet Etching of metal, silicon, oxide.
Plasma Dry Etching using Tegal 703E and 901E reactors for etching: SiN films, polysilicon, Ti films. Coming: DRIE with ICP etcher.
Ashing.
Modification of Electrical Properties:
Diffusion Furnaces: utilizing Trans LC. Long high temp drives maintain up to 1250oC.
Gate Oxide
Doping: Boron with BBr3 and POCl3.
Ion Implantation thru affiliates (bundling options).
EPI thru affiliates (bundling options).
H2 ANNEALING low temperature for Gate Oxides
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