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DEVICE SERVICES
Our fabrication plant is a core product & services asset, with a process and device library for bi-polar, opto-electronic, discrete, analog, mixed signal and MEMS segments. Our bi-polar process (with and without washed emitters) produces devices in the 5 volt to 200 volt range. Other processes utilize CMOS, NMOS, custom and dielectric technologies. We distinctively provide low dark current benefits. Device categories:
- Diodes
- Schottky Diodes
- TVS Devices
- DIACs & SIDACs
- Transistors
- Fuses
- JFETs & MOSFETs
- Resistors and Networks
- Capacitors
- Bipolar JI ASICS
- CMOS ASICS
- Photodiodes (photovoltaic & condutive modes)
- Photo detectors
- Photo Transistors, LDRs & Amplifiers
- Photovoltaic Stacks
- Solar Inverters & Optimizers
- Sensors
- Skin Sensitive Switches
- Customs Steps & custom devices with application-specific process technologies.
- IPD devices to protect components which are connected to high speed telecommunication lines from voltage surges caused by lightning, electrostatic discharge (ESD), electrical fast transients (EFT) and EMI filters.
- MEMS Pressure sensors and other devices
- Mixed Signal/Low power circuits. Both Analog and Digital circuits
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WAFER SERVICES
Laser Marking done for wafer identification before processing starts - reducing potential errors and contamination.
Patterning/Lithography:
Improved Photo aligning with Ultratech Steppers & Canon Aligners.
Photo masking with Positive Resist & Negative Resist
Deposition:
PECVD SiO2: low particulate and excellent uniformity thickness in Novellus Concept 1. Doped (5% Phosphorous) & Un-doped.
PECVD Silicon Nitride glass low stress (slightly tensile), low particulate and excellent uniformity thickness in Novellus Concept 1.
LPCVD Oxide – Doped (5% Phosphorous) and Un-doped.
LPCVD Polysilicon.
LPCVD Silicon Nitride.
Vapox Film Deposition in low temperature (400oC) oxide glassivation. Doped (5% Phosphorous ) and Un-doped.
Nitride, Oxide, and metal sputtering with Varian and Perkin Elmer Equipment.
Metal deposition: Al, Al-Si 1% and AlSiCu Metals offered. Custom coatings and target materials are also welcome.
Removal Processes Including Etching Options:
Wet Etching of metal, silicon, oxide.
Plasma Dry Etching using Tegal 703E and 901E reactors for etching: SiN films, polysilicon, Ti films. Coming: DRIE with ICP etcher.
Ashing.
Modification of Electrical Properties:
Diffusion Furnaces: utilizing Trans LC. Long high temp drives maintain up to 1250oC.
Gate Oxide
Doping: Boron with BBr3 and POCl3.
Ion Implantation thru affiliates (bundling options).
EPI thru affiliates (bundling options).
H2 ANNEALING low temperature for Gate Oxides
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PACKAGING SERVICES
Quad/Dual Flat No lead , PDIP, SOIC, MSOP, PSOP, Discrete, SOT
Packages with pin counts ranging from 3 to 700+.
WLCSPs or Wafer-Level Chip-Scale Packages which is a low cost solution that enables
direct connectivity at the substrate or board level.
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