DEVICE SERVICES

Our fabrication plant is a core product & services asset, with a process and device library for bi-polar, opto-electronic, discrete, analog, mixed signal and MEMS segments. Our bi-polar process (with and without washed emitters) produces devices in the 5 volt to 200 volt range. Other processes utilize CMOS, NMOS, custom and dielectric technologies. We distinctively provide low dark current benefits. Device categories:

  • Diodes
  • Schottky Diodes
  • TVS Devices
  • DIACs & SIDACs
  • Transistors
  • Fuses
  • JFETs & MOSFETs
  • Resistors and Networks
  • Capacitors
  • Bipolar JI ASICS
  • CMOS ASICS
  • Photodiodes (photovoltaic & condutive modes)
  • Photo detectors
  • Photo Transistors, LDRs & Amplifiers
  • Photovoltaic Stacks
  • Solar Inverters & Optimizers
  • Sensors
  • Skin Sensitive Switches
  • Customs Steps & custom devices with application-specific process technologies.
  • IPD devices to protect components which are connected to high speed telecommunication lines from voltage surges caused by lightning, electrostatic discharge (ESD), electrical fast transients (EFT) and EMI filters.
  • MEMS Pressure sensors and other devices
  • Mixed Signal/Low power circuits. Both Analog and Digital circuits
 

WAFER SERVICES

Laser Marking done for wafer identification before processing starts - reducing potential errors and contamination.

Patterning/Lithography:

Improved Photo aligning with Ultratech Steppers & Canon Aligners.

Photo masking with Positive Resist & Negative Resist

Deposition:

PECVD SiO2: low particulate and excellent uniformity thickness in Novellus Concept 1. Doped (5% Phosphorous) & Un-doped.

PECVD Silicon Nitride glass low stress (slightly tensile), low particulate and excellent uniformity thickness in Novellus Concept 1.

LPCVD Oxide – Doped (5% Phosphorous) and Un-doped.

LPCVD Polysilicon.

LPCVD Silicon Nitride.

Vapox Film Deposition in low temperature (400oC) oxide glassivation. Doped (5% Phosphorous ) and Un-doped.

Nitride, Oxide, and metal sputtering with Varian and Perkin Elmer Equipment.

Metal deposition: Al, Al-Si 1% and AlSiCu Metals offered. Custom coatings and target materials are also welcome.

Removal Processes Including Etching Options:

Wet Etching of metal, silicon, oxide.

Plasma Dry Etching using Tegal 703E and 901E reactors for etching: SiN films, polysilicon, Ti films. Coming: DRIE with ICP etcher.

Ashing.

Modification of Electrical Properties:

Diffusion Furnaces: utilizing Trans LC. Long high temp drives maintain up to 1250oC.

Gate Oxide

Doping: Boron with BBr3 and POCl3.

Ion Implantation thru affiliates (bundling options).

EPI thru affiliates (bundling options).

H2 ANNEALING low temperature for Gate Oxides
 

PACKAGING SERVICES

Quad/Dual Flat No lead , PDIP, SOIC, MSOP, PSOP, Discrete, SOT

Packages with pin counts ranging from 3 to 700+.

WLCSPs or Wafer-Level Chip-Scale Packages which is a low cost solution that enables direct connectivity at the substrate or board level.